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SIMOPAC(R) Module
BSM 101 AR
VDS = 50 V ID = 200 A R DS(on) = 3.0 m
q q q q q q
Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1
Type BSM 101 AR Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-S1018-A2
Symbol
Values 50 50 20 200 600 - 55 ... + 150 700 0.18 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS ID ID puls Tj, Tstg Ptot RthJC Vis
- - - -
Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 105 C Pulsed drain current, TC = 105 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance, chip-case Insulation test voltage , t = 1 min.
2)
A C W K/W Vac mm -
Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
17
03.96
BSM 101 AR
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 50 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 200 A Dynamic Characteristics Forward transconductance Values typ. max. Unit
V(BR)DSS
50 - 3.0 - 4.0
V
VGS(th)
2.1
I DSS
- - 50 300 10 2.6 250 1000
A
IGSS
- 100
nA m - 3.0
R DS(on)
VDS 2 x ID x RDS(on) max., ID = 200 A
Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on Time ton (ton = td (on) + tr) VCC = 40 V, VGS = 10 V ID = 200 A, RG = 3.3 Turn-off Time toff (toff = td (off) + tf) VCC = 40 V, VGS = 10 V ID = 200 A, RG = 3.3
gfs Ciss Coss Crss td (on) tr td (off) tf
156 - - - - - - -
200 18 9 3 280 220 220 60
- 24 12 4 - - - -
S nF
ns
Semiconductor Group
18
BSM 101 AR
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 400 A , VGS = 0 Reverse recovery time Values typ. max. Unit
IS
- - - 1.25 200 600
A
ISM
-
VSD
1.6
V ns 400 - C 3.5
trr Qrr
IF = IS, diF/dt = 100 A/s, VR = 30 V
Reverse recovery charge IF = IS, diF/dt = 100 A/s, VR = 30 V
Semiconductor Group
19
BSM 101 AR
Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: = 80 s pulse test
Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C, Tj 150 C
Typ. transfer characteristic ID = f (VGS) parameter: = 80 s pulse test, VDS = 25 V
Semiconductor Group
20
BSM 101 AR
Continuous drain-source current ID = f (TC) parameter: VGS 10 V, T j = 150 C
Drain-source breakdown voltage V(BR)DSS = b x V(BR)DSS (25 C)
Drain source on-state resistance RDS(on) = f (ID) parameter: VGS
Drain source on-state resistance RDS (on) = f (Tj) parameter: ID = 200 A; VGS = 10 V
Semiconductor Group
21
BSM 101 AR
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz
Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = VGS, ID = 1 mA (spread)
Semiconductor Group
22
BSM 101 AR
Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
Typ. gate charge VGS = f (QGate) parameter: IDpuls = 330 A
Semiconductor Group
23

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